DMN1019UFDE
0.020
0.016
1.2
1.0
0.8
0.012
V GS = 4.5V
I D = 5A
0.6
0.008
V GS = 10 V
I D = 10A
0.4
I D = 250μA
I D = 1mA
0.004
0
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
Fig. 10 On-Resistance Variation with Temperature
30
0.2
0
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
25
20
C iss
15
10
T A = 25°C
1,000
C oss
C rss
5
0
0
0.2 0.4 0.6 0.8 1.0
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
1.2
100
0
2 4 6 8 10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
12
8
6
4
2
V DS = -4V
I D = -10 A
0
0
5
10 15 20 25 30 35 40 45 50
Q g , TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN1019UFDE
D atasheet number: DS35561 Rev. 5 - 2
5 of 7
www.diodes.com
October 2013
? Diodes Incorporated
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